Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si |
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| Authors: | F Danie Auret Prakash NK Deenapanray |
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| Institution: | 1. Department of Physics, University of Pretoria, Pretoria 0002, South Africa and Centre for Electronic Materials, Devices and Nanostructures , UMIST, Manchester, UK , M60 1QD;2. Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, and Centre for Sustainable Energy Systems, Faculty of Engineering and Information Technology, The Australian National University , Canberra, ACT, Australia , 0200 |
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| Abstract: | The authors review what has been learned concerning the electrical and annealing properties of point defects in high-energy electron or proton irradiated Si from deep level transient spectroscopy (DLTS). The authors have focused mainly on the properties of electron traps, and to a lesser extent on the properties of hole traps. In addition to an in-depth discussion of hydrogen-related defects in Si, this review article provides a brief tutorial on ion-solid interactions and the theory underlying DLTS. The authors also provide a few examples of the power of high resolution Laplace DLTS in analyzing radiation induced defects. The collection of results gathered in this article may provide the fundamental information for successful defect engineering in light-particle irradiated Si. |
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| Keywords: | deep level transient spectrosc opy defects silicons irradiation |
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