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Electronic structure of light emitting centers in Er doped Si |
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| Authors: | LVC Assali F Gan LC Kimerling JF Justo |
| Institution: | Instituto de Física da Universidade de S?o Paulo, CP 66318, 05315-970, S?o Paulo, SP, Brazil, BR Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA, US Escola Politécnica da Universidade de S?o Paulo, CP 61548, CEP 05424-970, S?o Paulo, SP, Brazil, BR |
| Abstract: | Ab-initio calculations are carried out for the Er-related electrically active centers in Si. Our proposed microscopic model is consistent with photoluminescence measurements on Si:Er and Si:Er:O samples. For isolated Er, the tetrahedral interstitial site is the stable configuration, being related to the photoluminescence lines in Si:Er. Several configurations containing oxygen and fluorine atoms, surrounding the Er impurities, are proposed to simulate the effects of co-implantation. The results suggest that six oxygen atoms around substitutional Er can stabilize the center, which can be related to the strong photoluminescence lines in Si:Er:O samples. On the other hand, no configuration containing fluorine atoms could explain the stronger photoluminescence lines resulting from fluorine co-implantation. Received: 9 September 2002 / Accepted: 12 September 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +55-11/3091-5585, E-mail: jjusto@lme.usp.br |
| Keywords: | PACS: 71 55 -i 71 55 Cn |
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