a Physics Department, University of North Texas, Denton, TX, 76203, USA;b US ARMY RDECOM CERDEC NVESD, Ft. Belvoir, VA 22060, USA;c NIST, Gaithersburg, MD 20899, USA;d DRS Infrared Technologies, Dallas, TX, 75374, USA
Abstract:
Hg1−xCdxTe(x0.22) samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons (1.0×1016−1.7×1016 n/cm2) and subsequently annealed for 24 h in Hg overpressure to remove damage and reduce the presence of Hg vacancies. Extensive magnetotransport measurements were performed on these samples as part of an investigation into the use of elemental transmutation for efficient p-type doping of this material. The data were analyzed using a multi-carrier approach which incorporates various scattering mechanisms and the presence of two conduction channels of differing alloy content to describe the changes in the transport properties due to neutron irradiation.