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Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate |
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| Authors: | XJ Chen JS Hwang G Perillat-Merceroz S Landis B Martin D Le Si Dang J Eymery C Durand |
| Institution: | a Equipe mixte CEA-CNRS-UJF “Nanophysique et semiconducteurs”, CEA, INAC, SP2M, NPSC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;b Equipe mixte CEA-CNRS-UJF “Nanophysique et semiconducteurs”, Institut Néel-CNRS, 25 rue des Martyrs, BP 166, Fr-38042 Grenoble Cedex 9, France;c CEA, LETI, Minatec Campus, 38054 Grenoble Cedex 9, France;d CEA, INAC, SP2M, LEMMA, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France |
| Abstract: | |
| Keywords: | A1 Nanostructures A2 Selective epitaxy A3 Metalorganic vapor phase epitaxy B1 Nitrides |
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