Metal-molecule interactions upon deposition of copper overlayers on reactively functionalized porphyrin monolayers on Si(100)

The interaction of evaporated Cu deposited on a series of porphyrins in monolayers covalently attached to Si(100) substrates was investigated using cyclic voltammetry and FTIR spectroscopy. Each porphyrin contains a triallyl tripod attached to the porphyrin via a p-phenylene unit. The tripod anchors the porphyrin to the Si(100) substrate via hydrosilylation of the allyl groups. Two of the porphyrins are Zn chelates that possess meso p-cyanophenyl substituentsone, ZnP-CND, contains a single group opposite (distal) to the tripodal surface anchor, whereas the other, ZnP-CNL, contains two groups orthogonal (lateral) to the surface anchor. A third Zn porphyrin, ZnP, containing nonreactive p-tolyl groups at all three nonanchoring meso positions, was examined for comparison. The fourth porphyrin, FbP-HD, is a metal-free species (free base) that contains nonreactive phenyl (distal) and p-tolyl groups (lateral) at the three nonanchoring meso positions. The fifth porphyrin, CuP-HD, is the Cu chelate of FbP-HD, and serves as a reference complex for evaluating the effects of Cu metal deposition onto FbP-HD. The studies indicate that all of the porphyrin monolayers are robust under the conditions of Cu deposition, experiencing no noticeable degradation. In addition, the Cu metal does not penetrate through the monolayer to form electrically conductive filaments. For the ZnP-CND monolayers, the deposited Cu quantitatively reacts/complexes with the distal cyano group. In contrast, for the ZnP-CNL monolayers no reaction/complexation of the lateral cyano groups is observed. For the FbP-HD monolayers, Cu deposition results in quantitative insertion of Cu into the free base porphyrin. Collectively, the studies demonstrate that porphyrin monolayers are amenable to direct deposition of Cu overlayers and that functionalization of the porphyrins can be used to mediate the attributes of the metal-molecule junction.