| GaP:N液相外延材料发光区域的荧光测量 |
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| 引用本文： | 陈显锋,丁祖昌,董绵豫.GaP:N液相外延材料发光区域的荧光测量[J].光学学报,2000,20(5):07-710. |
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| 作者姓名： | 陈显锋 丁祖昌 董绵豫 |
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| 作者单位： | 浙江大学物理系,杭州,310027 |
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| 摘 要： | 通过磨斜角，用光致发光法测量了ＧａＰ：Ｎ液相外延（ＬＰＥ）材料中ｎ区和ｐ区的发光强度。从被测 荧光谱中可以看出，ｎ区和ｐ区均为发光区域，但是在ｐ－ｎ结两侧氮（Ｎ）浓度大致相同的情况下，ｐ区的发光强度明显高于ｎ区的发光强度，约为ｎ区发光强度的３～５倍，此实验结果表明，在ｐ、ｎ结附近杂质浓度较低情况下，ＧａＰ：Ｎ绿色发光外延材料中的发光区域主要是在ｐ区。
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| 关 键 词： | 液相外延材料 掺氮磷化镓 荧光测量 发光区域 |
| 收稿时间： | 1999/2/2 |
Fluorescence Experiment of GaP:N LPE Material Light-Emitting Region |
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| Chen Xianfeng,Ding Zuchang,Dong Mianyu.Fluorescence Experiment of GaP:N LPE Material Light-Emitting Region[J].Acta Optica Sinica,2000,20(5):07-710. |
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| Authors: | Chen Xianfeng Ding Zuchang Dong Mianyu |
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| Abstract: | By measuring photoluminescence spectra of each point along the slope of several polished Ga P:N green light emitting liquid phase epitary ( LPE) slices,the photolumi- nescence intensities of p- and n- type crystals are compared,itis found when nitrogen concen- tration is equal on two sides of p- n junction approximately,the main luminescence region is p- type region,though there is also light emitting from n- type region.The photolumi- nescence intensities in the former region are about3to5 times of that in the latter region. |
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| Keywords: | Ga P:N liquid phase epitaxy material photoluminescence light- emitting re- gion |
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