| 用阈值表达式研究长外腔半导体激光器的双稳特征 |
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| 引用本文： | 陈建国,李焱,陆洋,李大义,周小红.用阈值表达式研究长外腔半导体激光器的双稳特征[J].光学学报,2000,20(8):015-1020. |
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| 作者姓名： | 陈建国 李焱 陆洋 李大义 周小红 |
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| 作者单位： | 四川大学光电系,成都,610064 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 利用外腔半导体激光器（ＥＣＬＤ）在不同频率振荡所需的阈值载流子密度的表达式及相关的折射率表达式他它的双稳特性，由此导出了在外腔半导体激光器的ｐ－ｖ（功率－频率）曲线上出现双稳的条件以及双稳环宽度的解析表达式。
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| 关 键 词： | 外腔半导体激光 阈值 双稳特性 激光二极管 |
| 收稿时间： | 1999/1/25 |
Study of Bistable Characteristics of Long External Cavity Semiconductor Lasers Using Expression of Threshold Carrier Density |
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| Chen Jianguo,Li Yan,Lu Yang,Li Dayi,Zhou Xiaohong.Study of Bistable Characteristics of Long External Cavity Semiconductor Lasers Using Expression of Threshold Carrier Density[J].Acta Optica Sinica,2000,20(8):015-1020. |
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| Authors: | Chen Jianguo Li Yan Lu Yang Li Dayi Zhou Xiaohong |
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| Abstract: | When a long external cavity semiconductor laser (ECLD) is tuned to oscillate at different frequencies, the optical bistabilities of ECLDs are studied by using expressions of the threshold carrier density and carrier dependent refractive index. The criterion for observing optical bistability on the P-ν curve of an ECLD has been established and the expression for the hysteresis loop width has been deduced. |
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| Keywords: | external cavity semiconductor lasers threshold bistability |
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