| SiO2-GeO2薄膜二次谐波产生的稳定性研究 |
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| 引用本文： | 徐志凌,杨鹏,刘丽英,徐雷,侯占佳,王文澄.SiO2-GeO2薄膜二次谐波产生的稳定性研究[J].光学学报,2000,20(7):004-1008. |
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| 作者姓名： | 徐志凌 杨鹏 刘丽英 徐雷 侯占佳 王文澄 |
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| 作者单位： | 复旦大学物理系三束材料改性国家重点实验室,上海,200433 |
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| 基金项目： | 国家自然科学基金!(批准号 :19774 0 18)，国家攀登计划资助的课题 |
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| 摘 要： | 利用溶胶－凝胶（ｓｏｌ－ｇｅｌ）方法制备了ＳｉＯ２－ＧｅＯ２薄膜，并测量了薄样品电场极化后光学二次谐波信号的相对大小和时间弛以豫特性，通过对汪同衬底材料及不同温度下电场极化薄膜样品二次谐波信号的时间弛豫特性比较，表明薄膜与衬底之间界面电荷的稳定性受衬底材料体电导率的影响，从而影响了薄薄膜样品二次谐波信号的稳定性。
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| 关 键 词： | SiO22－GeO2 二次谐波产生 薄膜 稳定性 |
| 收稿时间： | 1999/2/10 |
SHG Stability of Thermally Poled SiO2-GeO2 Films |
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| Xu Zhiling,Yang Peng,Liu Liying,Xu Lei,Hou Zhanjia,Wang Wencheng.SHG Stability of Thermally Poled SiO2-GeO2 Films[J].Acta Optica Sinica,2000,20(7):004-1008. |
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| Authors: | Xu Zhiling Yang Peng Liu Liying Xu Lei Hou Zhanjia Wang Wencheng |
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| Abstract: | Sol gel method was used to prepare SiO 2 GeO 2 films. The relative intensity of second harmonic generation(SHG) signals of the thermally poled films and their relaxations were measured. By comparing the decay of second harmonic generation of the films with different substrates and under different temperatures,it is shown than the stability of charge near the interface between the film and substrate is influenced by the bulk electric resistance of the substrate,and this charge character consequently influences the SHG stability of the film. |
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| Keywords: | sol gel SiO 2 GeO 2 second harmonic generation film stability |
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