IR laser‐induced synthesis of nanostructured gemanium telluride in the gas phase

The gas‐phase synthesis and chemical vapour deposition of nanostructured germanium telluride has been achieved for the first time. The pulsed IR laser irradiation of gaseous CH₃)₄Ge? (CH₃)₂Te? SF₆ mixtures results in homogeneous decomposition of both organometallics and formation of GeTe_x (x = 1, 2). The amorphous GeTe₂ and crystalline GeTe were identified by Raman and X‐ray photoelectron spectroscopy and by electron diffraction. Their formation is explained by an intermediacy of germanium and tellurium clusters and by reaction between these clusters in a hot laser‐induced zone. Copyright © 2005 John Wiley & Sons, Ltd.