| 129Xeq+轰击N型和P型Si表面时的电子发射产额研究 |
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| 引用本文： | 曾利霞,徐忠锋,赵永涛,吴帆,刘学良,程锐,周贤明,雷瑜,刘世东,张艳宁.129Xeq+轰击N型和P型Si表面时的电子发射产额研究[J].原子核物理评论,2016,33(3):365-369. |
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| 作者姓名： | 曾利霞 徐忠锋 赵永涛 吴帆 刘学良 程锐 周贤明 雷瑜 刘世东 张艳宁 |
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| 作者单位： | 1.咸阳师范学院与中国科学院近代物理研究所联合共建:离子束与光物理实验室, 陕西 咸阳 712000; |
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| 基金项目： | 国家自然科学基金资助项目（11605147，11075125，11375138，11505248）；高等学校博士学科点专项科研基金（2013020111-0066）；陕西省教育厅科研计划资助项目（16JK1824）；咸阳师范学院专项科研项目（12XSYK018）；咸阳师范学院教学改革研究项目（201402011） |
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| 摘 要： | 在兰州重离子加速器国家实验室测量了1.8 MeV Xeq+离子分别轰击N型和P型Si两种靶材表面时的电子发射产额。实验中，通过改变入射离子的电荷态，研究了入射离子势能沉积对两种靶材表面电子发射产额的贡献。结果发现同一离子入射时，N型Si表面的电子发射产额高出P型Si表面的电子发射产额约12.5%；对于具有相同入射动能的Xeq+离子，两种靶材表面的电子发射产额均随着入射离子势能的增加而线性增加。此外，还测量了3.4 MeV Xeq+离子分别轰击以上两种靶材时的电子发射产额，得到了类似的结果。本文利用功函数分别从动能电子发射和势能电子发射两个角度对实验结果进行了分析讨论。The electron emissions from N-type Si and P-type Si induced by 1.8 MeV 129Xeq+are measured in the National Laboratory of Heavy Ion Research Facility in Lanzhou,The contribution to electron emission yield from potential energy of incident ions is studied through changing the charge state of incident ions.The results show that for the same incident ion,electron emission yield of N type Si surface is higher than that of P-type Si surface about 12.5%.For incident ions with the same kinetic energy,both electron emission yields of two targets increase linearly with incident ion energy.In addition,the electron emissions induced by 3.4 MeV 129Xeq+from N-type Si and P-type Si mentioned above are measured,which give similar results.The experimental results are analyzed and discussed using work function from two angles of the kinetic electron emission and the potential energy electron emission.
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| 关 键 词： | 高电荷态离子 电子发射产额 阈值速度 功函数 |
| 收稿时间： | 2016-05-29 |
Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+ |
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| ZENG Lixia,XU Zhongfeng,ZHAO Yongtao,WU Fan,LIU Xueliang,CHENG Rui,ZHOU Xianming,LEI Yu,LIU Shidong,ZHANG Yanning.Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+[J].Nuclear Physics Review,2016,33(3):365-369. |
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| Authors: | ZENG Lixia XU Zhongfeng ZHAO Yongtao WU Fan LIU Xueliang CHENG Rui ZHOU Xianming LEI Yu LIU Shidong ZHANG Yanning |
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| Institution: | 1.Ion beam & Optical Physical joint Laboratory of Xianyang Normal University and Institute of Modern Physics, Chinese Academy of Sciences, Xianyang 712000, Shanxi, China;2.Institute of Science and Technology for Laser and Particle Beams Xi'an Jiaotong University, Xi'an 710049, China;3.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China |
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| Abstract: | The electron emissions from N-type Si and P-type Si induced by 1.8 MeV 129Xeq+are measured in the National Laboratory of Heavy Ion Research Facility in Lanzhou,The contribution to electron emission yield from potential energy of incident ions is studied through changing the charge state of incident ions.The results show that for the same incident ion,electron emission yield of N type Si surface is higher than that of P-type Si surface about 12.5%.For incident ions with the same kinetic energy,both electron emission yields of two targets increase linearly with incident ion energy.In addition,the electron emissions induced by 3.4 MeV 129Xeq+from N-type Si and P-type Si mentioned above are measured,which give similar results.The experimental results are analyzed and discussed using work function from two angles of the kinetic electron emission and the potential energy electron emission. |
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| Keywords: | highly charged ions electron emission yield threshold velocity work function |
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