| 硅单晶中铜沉淀物的几何形态 |
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| 引用本文： | 巴图,何怡贞. 硅单晶中铜沉淀物的几何形态[J]. 物理学报, 1980, 29(7): 860-866 |
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| 作者姓名： | 巴图 何怡贞 |
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| 作者单位： | 中国科学院金属研究所 |
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| 摘 要： | 本文利用红外显微镜和化学浸蚀的方法,研究了硅单晶中铜沉淀物的几何形态。实验表明,用红外显微镜观察到的各种形态的沉淀物是由{110}面上的片状沉淀组成的,样品的性质对它的形态没有影响。关键词：
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| 收稿时间： | 1979-07-28 |
MORPHOLOGY OF THE COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS |
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| BA TU and HE YI-ZHEN. MORPHOLOGY OF THE COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS[J]. Acta Physica Sinica, 1980, 29(7): 860-866 |
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| Authors: | BA TU and HE YI-ZHEN |
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| Abstract: | In this article, infra-red microscopy and etching method were used to study the morphology of the copper precipitates in silicon crystals. It was found that a variety of copper precipitates observed by ir microscopy consists of precipitated disks laying in {110} planes and their morphology bears no relation to the properties of the sample. |
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