Impact of electron irradiation on particle track etching response in polyallyl diglycol carbonate (PADC) |
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Authors: | R Mishra S P Tripathy A Kul Shrestha A Srivastava S Ghosh K K Dwivedi D T Khathing M Müller D Fink |
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Institution: | (1) Department of Chemistry, North-Eastern Hill University, 793 003 Shillong, India;(2) Department of Physics, North-Eastern Hill University, 793 003 Shillong, India;(3) Hahn-Meitner Institute, Glienicker Strasse 100, D-14109 Berlin, Germany;(4) Arunachal University, Rono Hills, 791 111 Itanagar, India |
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Abstract: | In the present work, attempts have been made to investigate the modification in particle track etching response of polyallyl
diglycol carbonate (PADC) due to impact of 2 MeV electrons. PADC samples pre-irradiated to 1, 10, 20, 40, 60, 80 and 100 Mrad
doses of 2 MeV electrons were further exposed to 140 MeV28 Si beam and dose-dependent track registration properties of PADC have been studied. Etch-rate values of the PADC irradiated
to 100 Mrad dose electron was found to increase by nearly 4 times that of pristine PADC. The electron irradiation has promoted
chain scissioning in PADC, thereby converting the polymer into an easily etchable polymer. Moreover, the etching response
and the detection efficiency were found to improve by electron irradiation. Scanning electron microscopy of etched samples
further revealed the surface damage in these irradiated PADCs. |
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Keywords: | 2 MeV electron 140 MeV28Si PADC dose-dependent track registration properties bulk etch-rate etching response critical angle of etching detection efficiency scanning electron microscopy |
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