InN excitonic deformation potentials determined experimentally |
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| Authors: | B Gil M Moret O Briot S Ruffenach Ch Giesen M Heuken S Rushworth T Leese M Succi |
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| Institution: | 1. GES, UMR 5650 CNRS, CC074, Place Eugène Bataillon, Université Montpellier II, 34095 Montpellier, France;2. AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany;3. SAFC Hitech Limited, Power Road, Bromborough, Wirral, CH62 3QF, UK;4. Saes Getters S.p.a., Viale Italia 77, 20020 Lainate (Mi), Italy |
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| Abstract: | We report the experimental determination of the interband deformation potentials of indium nitride by combining both optical spectroscopy investigations and high-resolution X-ray measurements performed on a series of InN films grown by metal organic vapour-phase epitaxy. Our approach, which follows the one used for GaN by Shan et al. Phys. Rev. B. 54 (1996) 13460], gives here for InN a1=−7.66 eV, a2=−2.59 eV, b1=5.06 eV, and b2=−2.53 eV. |
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| Keywords: | 71 35 &minus y 61 10 Nz 81 15 Gh |
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