Crystal growth of InN by MOCVD with electric field along the c-axis

We report on physical properties of InN grown by metalorganic chemical vapor deposition (MOCVD) with electric field applied along the c-axis. The electric field is applied continuously from the growth of the low temperature InN buffer layer to the procedure of cooling down to room temperature. As a result, the crystal morphology degrades, c-lattice constant elongates by 0.12% at ±1 kV/cm, Hall mobility decreases, and the phonon vibration along the c-axis broadens, which suggests that the physical properties of InN can be controlled by the electric field applied along the c-axis during the crystal growth.