Calculation of shift of avalanche transit time phase delay due tooptically injected carriers in indium phosphide avalanche diodes |
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| Authors: | Banerjee JP Mukherjee R |
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| Institution: | Dept. of Electron. Sci., Calcutta Univ.; |
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| Abstract: | A computer method for the calculation of the phase shift due to optically injected carriers in an InP avalanche transit time diode has been suggested using the numerically simulated negative resistance profiles in the depletion layer of the diode. The results show that the phase shift due to hole injection is larger than that due to electron injection which explains the pronounced effect of photogenerated hole leakage current in modulating the microwave properties of InP diodes |
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