ICP-AES研究纳米TiO2材料对Ga,In, Tl的吸附性能

研究了纳米TiO2材料对Ga,In,Tl的吸附性能,考察了吸附动力学、最佳酸度、富集倍数和吸附容量,确定了待测金属离子的最佳吸附条件。实验结果表明:在最佳pH条件下,Ga,In,Tl能定量、快速地被吸附在纳米TiO2材料上;其静态吸附容量为:Ga48·6mg·g-1,In46·6mg·g-1和Tl23·4mg·g-1;被吸附在纳米TiO2上的金属离子能采用0·1mol·L-1EDTA 1·0mol·L-1HNO3混合溶液定量洗脱,其回收率均大于92%。当富集倍数为12·5时,本法对Ga(Ⅲ),In(Ⅲ),Tl(Ⅰ)的检出限分别为3·0,6·0,13ng·mL-1。计算了相应的相对标准偏差(RSD%)分别为1·85%,1·96%,3·40%,该方法已成功地应用于地质样品中痕量Ga(Ⅲ),In(Ⅲ),Tl(Ⅰ)的测定,结果满意。

Study on the Adsorption Behavior of Ga, In and Tl on Nanometer-Size Titanium Dioxide by ICP-AES

The adsorption behavior of nanometer TiO2 towards Gallium (Ga) Indium (In) and Thallium (Tl) was investigated with inductively coupled plasma atomic emission spectrometry (ICP-AES). The optimum conditions for adsorption were studied in detail, and the test included sorption kinetics, effect of pH on adsorption ratio, enrichment factor, and adsorption capacity. Under the optimum conditions, Ga (III), In(III) and Tl(I) ions could be adsorbed and recovered quantitatively. The static adsorption capacities of Ga(III), In(III) and Tl(I) on nanometer TiO2 were 48.6, 46.6 and 23.4 mg x g(-1) respectively. For the elution of Ga(III), In (III) and Tl(I), a mixture of 0.1 mol x L(-1) EDTA solution and 1.0 mol x L(-1) HNO3 was used, and the recovery ratio was above 92%. According to the definition of IUPAC, the detection limits (3sigma) of this method for Ga, In and Tl with an enrichment factor of 12.5 are 3.0, 6.0 and 13 ng x mL(-1), respectively; and relative standard deviations (RSD) are 1.85%, 1.96% and 3.4%, respectively (n = 6). The proposed method has been applied successfully to the analysis of geological samples with satisfactory results.