The microstructure of vertically coupled quantum dots ensembles by EXAFS spectroscopy |
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| Authors: | S. B. Erenburg S. V. Trubina N. V. Bausk A. I. Nikiforov A. V. Dvurechenskii V. G. Mansurov K. S. Zhuravlev S. G. Nikitenko |
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| Affiliation: | (1) Department of Chemical and Petroleum Engineering and the Center for Environmentally Beneficial Catalysis, University of Kansas, Lawrence, KS 66049, USA;(2) BP Advanced Refining and New Technology, Naperville, IL 60563, USA |
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| Abstract: | The microstructure of samples containing Ge/Si, GaN/AlN, and InAs/AlAs (Ge, GaN, and InAs quantum dots (QDs) in the Si, AlN, and AlAs matrices, respectively) multilayer heterostructures has been investigated by EXAFS spectroscopy. The effect of the effective thicknesses of Si (or AlN) barrier layers, number of Ge (or GaN) layers in a sandwich, and annealing temperature on the size and shape of Ge (or GaN) clusters, interfacial diffusion in these systems, and formation of three-dimensional ordered ensembles of QDs has been established. |
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