Phase diffraction gratings based on a Si(400) crystal |
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Authors: | D V Roshchupkin D V Irzhak S L Shabel’nikova A A Firsov |
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Institution: | 1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia 2. Institute for Nanometre Optics and Technology, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, 12489, Germany
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Abstract: | The X-ray optical properties of diffraction gratings fabricated on the basis of a Si(400) crystal with a period of D = 1 μm are studied by triple-crystal X-ray diffractometry. The diffraction gratings are manufactured both by silicon profiling during the process of plasma chemical etching and by forming a phase-shift grating on the surface of a Si crystal. The principal difference in the diffraction properties of these gratings is demonstrated. The presence of an Au phase-shift grating is shown to lead to the formation of a two-dimensional diffraction pattern, whereas Si profiling leads to the formation of only a one-dimensional diffraction pattern. |
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