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Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy
Authors:Ousmane I Barry  Kaddour Lekhal  Si‐Young Bae  Ho‐Jun Lee  Markus Pristovsek  Yoshio Honda  Hiroshi Amano
Affiliation:1. Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi, Japan;2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi, Japan;3. Department of Electrical and Computer Engineering, University of Wisconsin‐Madison, Madison, WI, USA;4. Energy and Environment Division, Korea Institute of Ceramic Engineering and Technology, Jinju, Gyeongsangnam‐do, South Korea;5. Akasaki Research Center, Nagoya University, Nagoya, Aichi, Japan
Abstract:
Keywords:carrier gases  m‐plane GaN  metalorganic vapor phase epitaxy  residual impurities  surface morphologies
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