| 用于高压H桥电路中栅驱动器的线性稳压器 |
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| 引用本文： | 邱双杰,罗萍,黄龙. 用于高压H桥电路中栅驱动器的线性稳压器[J]. 微电子学, 2018, 48(3): 306-309, 315 |
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| 作者姓名： | 邱双杰 罗萍 黄龙 |
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| 作者单位： | 电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054,电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054,电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054 |
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| 基金项目： | 国家自然科学基金委NSAF联合基金资助项目(U1630117) |
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| 摘 要： | 设计了一种用于高压H桥电路中栅驱动器的线性稳压器,为H桥高端P-LDMOS提供了稳定的开启栅电压。采用频率补偿切换和自适应偏置电流技术,以保证稳压器在周期性突变的容性负载下的稳定性,并且具有快速的瞬态响应。典型应用的仿真结果表明,与未采用以上技术的原结构相比,新结构中P-LDMOS的开启时间缩短了47%,理论最高工作频率提高了1倍。
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| 关 键 词： | H桥 频率补偿切换 快速瞬态响应 |
| 收稿时间： | 2017-05-27 |
A Linear Regulator Applied in Gate Driver for H-Bridge IC |
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| QIU Shuangjie,LUO Ping and HUANG Long. A Linear Regulator Applied in Gate Driver for H-Bridge IC[J]. Microelectronics, 2018, 48(3): 306-309, 315 |
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| Authors: | QIU Shuangjie LUO Ping HUANG Long |
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| Affiliation: | State Key Lab. of Elec.Thin Films and Integr. Dev., Univ. of Elec. Sci. and Technol. of China, Chengdu 610054,P. R. China,State Key Lab. of Elec.Thin Films and Integr. Dev., Univ. of Elec. Sci. and Technol. of China, Chengdu 610054,P. R. China and State Key Lab. of Elec.Thin Films and Integr. Dev., Univ. of Elec. Sci. and Technol. of China, Chengdu 610054,P. R. China |
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| Abstract: | A linear regulator applied in gate driver for high voltage H-bridge IC was designed, which could deliver a stable on-state gate voltage for H-bridge high-side P-LDMOS. By utilizing switchable frequency compensation and adaptive bias current technology, the proposed regulator featured an improved stability under periodic capacitive load and an accelerated transient response. Simulation in the typical applications showed that the new design decreased the switching delay of P-LMOS by 47% and doubled the maximum operating frequency than that of original one. |
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