| 非离子表面活性剂在钽基阻挡层CMP中的作用 |
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| 引用本文： | 张文倩,刘玉岭,王辰伟,牛新环,韩丽楠,季军,杜义琛.非离子表面活性剂在钽基阻挡层CMP中的作用[J].微电子学,2018,48(3):421-424. |
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| 作者姓名： | 张文倩 刘玉岭 王辰伟 牛新环 韩丽楠 季军 杜义琛 |
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| 作者单位： | 河北工业大学 电子信息工程学院 天津市电子材料与器件重点实验室, 天津 300130,河北工业大学 电子信息工程学院 天津市电子材料与器件重点实验室, 天津 300130,河北工业大学 电子信息工程学院 天津市电子材料与器件重点实验室, 天津 300130,河北工业大学 电子信息工程学院 天津市电子材料与器件重点实验室, 天津 300130,河北工业大学 电子信息工程学院 天津市电子材料与器件重点实验室, 天津 300130,河北工业大学 电子信息工程学院 天津市电子材料与器件重点实验室, 天津 300130,河北工业大学 电子信息工程学院 天津市电子材料与器件重点实验室, 天津 300130 |
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| 基金项目： | 河北省研究生创新资助项目(220056)；河北省青年自然科学基金资助项目(F2015202267)；国家中长期科技发展规划02科技重大专项资助项目(2016ZX02301003-004-007)；天津市自然科学基金资助项目(16JCYBJC16100) |
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| 摘 要： | 碱性条件下,非离子型表面活性剂在阻挡层化学机械平坦化中起着重要的作用。分别对阻挡层材料Cu、Ta以及SiO2介质进行抛光,然后测量铜表面粗糙度。对含有不同浓度活性剂的抛光液进行接触角和Zeta电位的测试,并对活性剂的作用机理进行分析。活性剂体积分数达到3%时,铜表面粗糙度可达0.679 nm,抛光液在铜膜表面的接触角低至10.25°,Zeta电位达到-50.2 mV。实验结果表明,活性剂在减小粗糙度的同时可提高抛光液的湿润性和稳定性,便于抛光后清洗和长时间放置。
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| 关 键 词： | 非离子表面活性剂 接触角 化学机械平坦化 Zeta电位 表面粗糙度 |
| 收稿时间： | 2017/9/19 0:00:00 |
Role of Non-Ionic Surfactant on Tantalum-Based Barrier CMP |
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| ZHANG Wenqian,LIU Yuling,WANG Chenwei,NIU Xinhuan,HAN Linan,JI Jun and DU Yichen.Role of Non-Ionic Surfactant on Tantalum-Based Barrier CMP[J].Microelectronics,2018,48(3):421-424. |
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| Authors: | ZHANG Wenqian LIU Yuling WANG Chenwei NIU Xinhuan HAN Linan JI Jun and DU Yichen |
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| Institution: | Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, P. R. China,Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, P. R. China,Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, P. R. China,Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, P. R. China,Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, P. R. China,Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, P. R. China and Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, P. R. China |
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| Abstract: | Non-ionic surfactant plays an important role in barrier chemical mechanical planarization under alkaline conditions. Copper, tantalum and SiO2 dielectric were polished, and then the copper surface roughness, contact angles and Zeta potential of slurries were measured respectively as a function of non-ionic surfactant. The mechanism of non-ionic surfactant was analyzed. The results showed that the surface roughness of copper was 0.679 nm, the contact angle of slurry was 10.25° and Zeta potential was -50.2 mV at 3% surfactant. It was demonstrated that non-ionic surfactant was beneficial to reduce the copper surface roughness and improve the wettability and stability of slurry, which was convenient for cleaning after polishing and storing for a long time. |
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| Keywords: | non-ionic surfactant contact angle CMP Zeta potential surface roughness |
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