掺杂预合成添加剂对氧化锌压敏电阻性能影响

为了提高氧化锌(ZnO)压敏电阻的电学性能,采用常规烧结并在ZnO压敏电阻中掺杂预先合成的BiSbO₄和Zn₂SiO₄,研究不同掺杂比例对ZnO压敏电阻的微观结构、电学性能、通流能力的影响.结果表明:ZnO压敏电阻在掺杂BiSbO₄和Zn₂SiO₄后,能够有效抑制ZnO晶粒变大,晶体结构变得致密均匀,致密性有所提高,有效提高压敏特性和通流能力.BiSbO₄和Zn₂SiO₄掺杂比例为3∶1的样品综合性能比较优异,样品的致密度为5.58 g·cm^-3,压敏电位梯度达到425 V·mm^-1,非线性系数为70,漏电流为1.2×10^-7 A·cm^-2,能量耐受能力达到334.21 J·cm^-3,残压比为2.5.

Effect of Doped Pre-Synthesized Additives on Performance of ZnO Varistor

In order to improve the electrical properties of ZnO Varistors, the pre-synthesized BiSbO₄ and Zn₂SiO₄ were prepared and doped in the ZnO varisistor by conventional sintering. The effect of the different doping ratios on the microstructure, electrical properties and surge absorption capability of ZnO varistors were studied. It is shown that after ZnO varistor is doped with BiSbO4 and Zn₂SiO₄, we can effectively prevent the ZnO crystal grains from becoming larger, and the crystal structure becomes dense and uniform, and the density is improved, which effectively improves the pressure-sensitive characteristy and surge current capability. The overall performance of the sample with the doping ratio of BiSbO₄ and Zn₂SiO₄ of 3∶1 is relatively excellent. The density of the sample is 5.58 g·cm^-3, the varistor potential gradient reaches 425 V·mm^-1, nonlinear coefficient is 70, the leakage current is 1.2×10^-7 A·cm^-2, the energy capacity reaches 334.21 J·cm^-3, and the residual voltage ratio is 2.5.