Cu1-x Cox InTe2稀磁半导体的制备及磁学、光学性质

采用真空电弧熔炼技术制备Cu_1-xCo_xInTe₂(Co元素掺杂比x=0, 0.1, 0.2, 0.3)稀磁半导体。利用X射线衍射仪(XRD)、振动样品磁强计(VSM)和紫外可见近红外分光光度计(UV-Vis-NIR)分别表征样品的晶体结构、磁学性质和光学性质。研究表明:4种稀磁半导体中主相均为Cu_1-xCo_xInTe₂，具有四方结构，空间群为I42d。掺杂的Co原子与Cu原子共同占据4a(0, 0, 0)晶位，In原子占据4b(0, 0, 1/2)晶位，Te原子占据8d(x, 1/4, 1/8)晶位。Cu_1-xCo_xInTe₂呈现室温铁磁性，其室温磁化遵循Langevin模型，随着x的增加，其饱和磁化强度增大。调控Co掺杂量，可以提高Cu_1-xCo_xInTe₂稀磁半导体的光吸收带宽E_g，使其具有太阳能光伏材料的应用可能性。

The Preparation and Magnetic and Optical Properties of Cu1-xCoxInTe2 Diluted Magnetic Semiconductor

The diluted magnetic semiconductors Cu_1-xCo_xInTe₂ (Co doping ratio x=0, 0.1, 0.2, 0.3) was synthesized through vacuum arc melting. X-ray diffractometer (XRD), vibrating sample magnetometer(VSM), and UV-Vis-NIR spectrometer were used to investigate their crystal structures and magnetic and optical properties, respectively. The main phases of Cu_1-xCo_xInTe₂ crystalline has tetragonal structure with a space group of I42d. The atomic occupations are 4a(0, 0, 0) for Co and Cu atoms, 4b(0, 0, 1/2) for In and 8d(x, 1/4, 1/8) for Te, respectively. Cu_1-xCo_xInTe₂ shows room temperature ferromagnetic characteristics, and their field dependence of magnetization follows a Langevin model. Their saturation magnetization increases with increased x. The bandgaps of Cu_1-xCo_xInTe₂ can be adjusted by controlling the doping amount of Co, which makes possible its potential application as photovoltaic material.