Effects of electron radiation on shielded space and triple-junction GaAs solar cells

The displacement damage dose methodology for analysing andmodelling the performance of triple-junction InGaP₂/GaAs/Gesolar cells in an electron radiation environment is presented.Degradations at different electron energies are correlated withdisplacement damage dose (D_rm d). One particular electronradiation environment, relative to a geosynchronous earth orbit (GEO),is chosen to calculate the total D_rm d behind the differentthicknesses coverglasses to predict the performance degradation atthe end of the 15-year mission.