Synthesis of single-crystalline wurtzite aluminum nitride nanowires by direct arc discharge |
| |
| Authors: | LH Shen XF Li J Zhang YM Ma F Wang G Peng QL Cui GT Zou |
| |
| Institution: | (1) National Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P.R. China |
| |
| Abstract: | High-density hexagonal aluminum nitride (h-AlN) nanowires were synthesized through the direct reaction of Al with nitrogen gas without catalyst and template using a direct arc discharge method. The as-grown AlN nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The h-AlN nanowires have a diameter in the range 20–70 nm and a length of several tens of micrometers. Vapor–solid growth mechanisms can be employed to explain the formation of the h-AlN nanowires. PACS 81.05.Ea; 81.10.Bk; 81.16.Dn; 68.65.-k; 81.16.-c |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
