Anisotropy of long-wavelength optical phonons in GaAs/AlAs superlattices |
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| Authors: | V. A. Volodin M. P. Sinyukov |
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| Affiliation: | 1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
2. Novosibirsk State University, Novosibirsk, 630090, Russia
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| Abstract: | The angular anisotropy of optical phonons in GaAs/AlAs (001) superlattices is investigated by Raman scattering spectroscopy. Scattering configurations allowed for phonons with wave vectors oriented along the superlattice layers and normally to them are used. For phonons localized in GaAs layers, the theoretically predicted mixing of the LO1 longitudinal modes with TO1 transverse modes in which atomic displacements occur along the normal to the superlattice is observed experimentally. These modes possess noticeable angular anisotropy. For transverse modes in which atoms move in the plane of the superlattice, the angular anisotropy is small. |
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