Reversible H2 passivation of Si ≡ Si3 interface defects in (1 1 1)Si/SiO2 |
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Authors: | A Stesmans and G Van Gorp |
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Institution: | a Department Natuurkunde, Katholieke Universiteit Leuven, 3001, Leuven, Belgium |
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Abstract: | K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between 1 1 1]Pb centers (*Si ≡ Si3 defects with unpaired sp3 hybrid 1 1 1]) at the 2 dimensional (1 1 1)Si/SiO2 interface. This has been enabled by the perfectly reversible H2 passivation of Pb, which affects the defect's spin state. Sequential hydrogenation at 253–353°C and degassing treatments in high vacuum at 743–835°C allowed to vary the Pb density in the range 5 × 1010 < Pb] (1.14 ± 0.06) × 1013 cm-2. With increasing Pb] fine structure doublets are clearly resolved. It is found that (1 1 1)Si/SiO2 interfaces, dry thermally grown at ≈920°C, naturally comprise a *Si ≡ Si3 defect density — passivated or not — of 1.14 × 1013 cm-2. |
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