Fabrication of Single Crystalline silicon on Glass by Smart—Cut Technique |
| |
引用本文: | 宋华清,石兢,等.Fabrication of Single Crystalline silicon on Glass by Smart—Cut Technique[J].中国物理快报,2003,20(1):108-110. |
| |
作者姓名: | 宋华清 石兢 |
| |
作者单位: | [1]StateKeyLaboratoryofUnctionalMaterialsforInformatics,ShanghaiInstituteofMicrosystemandInformationTechnology,ChineseAcademyofSciences,Shanghai200050 [2]DepartmentofPhysics,WuhanUniver |
| |
摘 要: | Single crystalline silicon films are transferred on to a glass substrate by the smart-cut technique,which is based on H^ ions implantation,anodic bonding and layer transfer,Structures of the resulting thin film silicon on galss(SOG) are characterized by transmission-electron microscopy,scanning electron microscopy and Raman spectroscopy.The results show that SOG substrates fabricated by the smart-cut have advantages of steep top Si/glass interface and good monocrystalline Si quality.The Hall-effect measurement indicates that the single crystalline SOG substrates have a better electrical property compared with polycrystalline silicon SOG substrates.
|
关 键 词: | 单结晶硅 薄膜 生长 切割工艺 |
本文献已被 维普 等数据库收录! |
|