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Fabrication of Single Crystalline silicon on Glass by Smart—Cut Technique
引用本文:宋华清,石兢,等.Fabrication of Single Crystalline silicon on Glass by Smart—Cut Technique[J].中国物理快报,2003,20(1):108-110.
作者姓名:宋华清  石兢
作者单位:[1]StateKeyLaboratoryofUnctionalMaterialsforInformatics,ShanghaiInstituteofMicrosystemandInformationTechnology,ChineseAcademyofSciences,Shanghai200050 [2]DepartmentofPhysics,WuhanUniver
摘    要:Single crystalline silicon films are transferred on to a glass substrate by the smart-cut technique,which is based on H^ ions implantation,anodic bonding and layer transfer,Structures of the resulting thin film silicon on galss(SOG) are characterized by transmission-electron microscopy,scanning electron microscopy and Raman spectroscopy.The results show that SOG substrates fabricated by the smart-cut have advantages of steep top Si/glass interface and good monocrystalline Si quality.The Hall-effect measurement indicates that the single crystalline SOG substrates have a better electrical property compared with polycrystalline silicon SOG substrates.

关 键 词:单结晶硅  薄膜  生长  切割工艺
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