Energy threshold of Cs-induced chemisorption of oxygen on a GaAs(Cs,O) surface |
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| Authors: | K V Toropetsky O E Tereshchenko A S Terekhov |
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| Institution: | (1) Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia;(2) Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia |
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| Abstract: | The probability of Cs-induced chemisorption of oxygen on a p-GaAs(Cs, O) surface is experimentally shown to be close to unity only when the work function does not exceed ～3.1 ± 0.1 eV. The measured adsorption energy threshold likely corresponds to the energy of the unoccupied level of the antibonding 2π* orbital of the O2 molecule in the preadsorption state on the semiconductor surface. |
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