二维过渡金属二硫化物中自旋能谷耦合的谷电子学

电子的电荷自由度与自旋自由度是现代电子器件的基础核心之一。随着二维材料，尤其是二维过渡族硫化物(TMDCs)的研究深入，另一个自由度——能谷——也引起了人们极大的研究兴趣。由于TMDCs中自旋与能谷的强耦合，自旋(能谷)可以通过能谷(自旋)方便地进行调控和探测，为电子自旋和能谷的相关领域提供了新的手段和方法。文章首先对能谷自由度以及TMDCs中自旋与能谷的强耦合进行了介绍，然后介绍基于圆偏振光激发和自旋注入两种方式进行的自旋调控和探测的理论和实验工作，最后对基于能谷的自旋调控进行了总结和展望。

Spin-valley coupled valleytronics in two-dimensional transitional metal dichalcogenides

The charge and spin degrees of freedom of electrons are at the heart of modern electronic devices. With the development of 2-dimensional (2D) materials, especially 2D transitional metal dichalcogenides (TMDCs), another degree of freedom ─ the energy valley ─ has attracted great interest. Due to the strong spin-valley coupling in TMDCs, the spin can be easily controlled and detected through the valley degree of freedom, and vice versa, providing novel routes to study spins and valleys. In this article, we first describe the valley degree of freedom and the physics of strong spin-valley coupling in TMDCs, then review recent theoretical and experimental work on coupled valley and spin manipulation through optical circular dichroism and spin injection. Finally, the current progress and future prospects are summarized.