Hopping conduction in Cr-doped amorphous gallium arsenide films |
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| Authors: | K Nair SS Mitra |
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| Institution: | Department of Electrical Engineering, University of Rhode Island, Kingston, Rhode Island 02881, USA |
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| Abstract: | Amorphous Cr-doped GaAs has been prepared by rf sputtering and the dc conductivity measured at fields up to 107 V/m and temperatures down to 80 K. The results are explained in terms of field-assisted hopping. Effects of isothermal annealing at temperatures up to 200°C are studied. The studies are repeated and the results compared with undoped a-GaAs. Room temperature resistivities of a-GaAs: Cr, a-GaAs and polycrystalline GaAs are also compared. The recrystallization temperature for a-GaAs films is determined to be between 320°C and 340°C. |
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