| Abstract: | Developing controlled approaches for synthesizing high‐quality two‐dimensional (2D) semiconductors is essential for their practical applications in novel electronics. The application of chemical vapor transport (CVT), an old single‐crystal growth technique, has been extended from growing 3D crystals to synthesizing 2D atomic layers by tuning the growth kinetics. Both single crystalline individual flakes and continuous films of 1 L MoS2 were successfully obtained with CVT approach at low growth temperatures of 300–600 °C. The obtained 1 L MoS2 exhibits high crystallinity and comparable mobility to mechanically exfoliated samples, as confirmed by both atomic resolution microscopic imaging and electrical transport measurements. Besides MoS2, this method was also used in the growth of 2D WS2, MoSe2, Mox W1−x S2 alloys, and ReS2, thus opening up a new way for the controlled synthesis of various 2D semiconductors. |
