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Atomic Force Microscopy Studies of SnO2 Thin Film Microstruc tures Deposited by Atomic Layer Epitaxy |
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| Authors: | Mikko Utriainen Hanna Lattu Heli Viirola Lauri Niinistö Roland Resch Gernot Friedbacher |
| Affiliation: | (1) Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, FIN-02015 Espoo, Finland, FI;(2) Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Wien, Austria, AT |
| Abstract: | ALE-grown, rutile-type SnO2 thin films and gas sensor structures based thereupon were studied by AFM with main emphasis on cross-sectional investigations (X-AFM). On glass substrates the polycrystalline films showed a preferred orientation which depended on the film thickness and growth temperature while on single crystal sapphire () the growth was heteroepitaxial. For the X-AFM studies various sample preparation techniques were investigated but only ion beam etching gave satisfactory results and revealed substructures in the sensor structure consisting of Pt and SnO2 layers on a silicon substrate. |
| Keywords: | : Atomic force microscopy (AFM) atomic layer epitaxy (ALE) cross-sectional AFM (X-AFM) heteroepitaxy gas sensor tin dioxide. |
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