Photoluminescence properties of impurity-doped ZnS nanocrystals fabricated by sequential ion implantation |
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| Authors: | A. Ishizumi C.W. White Y. Kanemitsu |
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| Affiliation: | aGraduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan;bSolid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 3783, USA;cInternational Research Center for Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 610-0011, Japan |
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| Abstract: | We have studied photoluminescence (PL) spectrum and dynamics of Cu- and Al-doped ZnS (ZnS:Cu,Al) nanocrystals fabricated by sequential implantation of Zn+, S+, Cu+, and Al+ ions into Al2O3 matrices. These samples exhibit intense green PL under UV light excitation. The space- and time-resolved PL measurements show that the broad green PL is due to the donor–acceptor (DA) pair luminescence of single ZnS:Cu,Al nanocrystals. |
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| Keywords: | Nanocrystal Ion implantation ZnS Photoluminescence |
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