A1.3 μm strained quantum well laser on a graded InGaAs buffer with a GaAs substrate |
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Authors: | T Uchida H Kurakake H Soda S Yamazaki |
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Institution: | (1) Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, 243-01 Atsugi, Japan;(2) Fujitsu Limited, 1015 Kamikodanaka, 211 Kawasaki, Japan |
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Abstract: | We grew a 1.3 μm strained-layer quantum well (SL-QW) laser with InGaP cladding layers on a lattice-relaxation buffer layer
by metalorganic vapor phase epitaxy. For the lattice-relaxation buffer, we used a compositionally graded InGaAs/GaAs structure.
The significantly reduced surface roughness of the InGaP cladding layers achieved by supplying a large amount of H2Se enables CW operation of our 1.3 μm SL-QW laser. We achieved a low threshold current of less than 10 mA and a high characteristic
temperature of 100K around room temperature. |
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Keywords: | Characteristic temperature compositionally graded layer InGaAs/GaAs laser lattice relaxation metalorganic vapor phase epitaxy (MOVPE) quantum well (QW) Se |
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