Nanostructural and photoluminescence features of nanoporous silicon prepared by anodic etching

The nanostructural and photoluminescence (PL) features of nanoporous Si (NPS) were investigated in terms of various process parameters such as current density, etching time and oxidation conditions. The NPS was prepared by electrochemical anodic etching of p-type (0 0 1) Si wafers of 4 Ω cm resistivity in HF solution. The pores are of polygon-type columns with 5, 6 and 7 side walls. The average diameter of the column-shaped pores is critically determined by the current density, while the etching time plays an important role on the pore depth; in particular, when the current densities of 30 and 100 mA/cm² were applied, the pore diameters were 9 nm and 3.3 μm, respectively. The variation in the PL characteristics of the NPS with oxidation condition and etching current density was measured and then related with their structural changes. The aging and thermal treatments produce oxidation and lattice distortion in the NPS. The degree of deviation from the as-prepared NPS during aging or thermal treatment seems to depend on the nanostructure as well as morphology of the NPS. It is found in this study that etching current density plays an important role on such structural features of the NPS.