| GaInN light-emitting diodes with omni-directional reflector using nanoporous SnO_2 film |
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| 作者姓名： | 沈常宇 冯华君 徐之海 金尚忠 |
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| 作者单位： | State Key Laboratory of Modern Optical Instrumentation Zhejiang University，State Key Laboratory of Modern Optical Instrumentation Zhejiang University，State Key Laboratory of Modern Optical Instrumentation Zhejiang University，Optoelectronics Technology Institute China JiLiang University Hangzhou 310027 Optoelectronics Technology Institute，China JiLiang University，Hangzhou 310018，Hangzhou 310027，Hangzhou 310027，Hangzhou 310018 |
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| 基金项目： | the Opening Foundation of China JiLiang University under Grant No.2006KF07 |
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| 摘 要： | Enhancement of light extraction in a GaInN light-emitting diode （LED） employing an omni-directional reflector （ODR） consisting of GaN, SnO2 nanorod and an Ag layer was presented. The ODR comprises a transparent, quarterwave layer of SnO2 nanorod claded by silver and serves as an ohmic contact to p-type GaN. Transparent SnO2 sols were obtained by sol-gel method from SnCl2·2H2O, and SnO2 thin films were prepared by dip-coating technique. The average size of the spherical SnO2 particles obtained is 200 nm. The refractive index of the nanorod SnO2 film layer is 2.01. The GaInN LEDs with GaN/SnO2/Ag ODR show a lower forward voltage. This was attributed to the enhanced reflectivity of the ODR that employs the nanorod SnO2 film layer. Experimental results show that ODR-LEDs have lower optical losses and higher extraction efficiency as compared to conventional LEDs with Ni/Au contacts and conventional LEDs employing a distributed Bragg reflector （DBR）.
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| 关 键 词： | GaInN 二极管 光学元素 反射镜 |
GaInN light-emitting diodes with omni-directional reflector using nanoporous SnO2 film |
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| Institution: | [1]State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027; [2]Optoelectronics Technology Institute, China JiLiang University, Hangzhou 310018 |
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