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Electron Backscattering from Real and In-Situ Treated Surfaces
Authors:Luděk Frank  Richard Steklý  Martin Zadražil  Mohamed M. El-Gomati  Ilona Müllerová
Affiliation:(1)  Institute of Scientific Instruments AS CR, Královopolská 147, 612 64 Brno, Czech Republic, CZ;(2)  Department of Electronics, University of York, Heslington, York YO10 5DD, United Kingdom, GB
Abstract: Significant differences in backscattered electron (BSE) yields exist between the surfaces cleaned by methods used in electron microscopy and spectroscopy. These differences have been observed for Au, Cu and Al specimens, and are interpreted on the basis of simulated BSE yields. Composition and thickness of the surface contamination layers, responsible for the differences, are estimated. The results (7 nm of carbon on Au or 3 nm of oxide on Al) remain within expectation and indicate that the BSE yield measurements and BSE images should be interpreted cautiously. Peculiar results are obtained for Cu, perhaps due to a different cleaning procedure. A new concept of an information depth for the BSE signal is introduced as a depth within which the total BSE yield can be modelled as composed of the yields of layers proportional to their thickness weighted by the escape depths. This concept proved satisfactory for thin surface layers and brought the information depth values 2 to 4 times smaller than first estimated, i.e. half the penetration depth.
Keywords::   Electron backscattering   surface sensitive signals.
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