| 低压、反向偏压,铒和钕注入的ZnSe发光二极管 |
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| 引用本文： | 钟国柱,F.J.Bryant.低压、反向偏压,铒和钕注入的ZnSe发光二极管[J].发光学报,1982,3(1):20-22. |
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| 作者姓名： | 钟国柱 F.J.Bryant |
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| 作者单位： | 1. 中国科学院长春物理研究所;2. 英国Hull大学物理系 |
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| 摘 要： | 由铒和钕注入的ZnSe单晶所制备的发光二极管有很好的电致发光.这些二极管的外能量效率大约为5×10-5W/W,并且可以在很低电压下和低温下(77K)工作.这些二极管发射光谱显示了三价稀土离子饵和汝的特征辐射.
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LOW-VOLTAGE,REVERSED-BIASED DIODES OF ERBIUM-IMPLANTED AND NEODYMIUM-IMPLANTED ZINC SELENIDE |
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| Zhong Guo-zhu,F. J. Bryant.LOW-VOLTAGE,REVERSED-BIASED DIODES OF ERBIUM-IMPLANTED AND NEODYMIUM-IMPLANTED ZINC SELENIDE[J].Chinese Journal of Luminescence,1982,3(1):20-22. |
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| Authors: | Zhong Guo-zhu F J Bryant |
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| Institution: | 1. Changchun Institute of physics, Academia sinica;2. Department of physics, University of Hull |
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| Abstract: | Good electroluminescent diodes have been fabricated from neodymium-implanted or erbium-implanted zinc selenide crystals. These diodes have an external power efficiency of 5×10-5w/w and can be operated at very low voltage and at low temperature (e.g.77K). They Show the characteristic emission spectra of Nd3+ or Er3+. |
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