| CMOS存储器瞬时辐照效应规律实验研究 |
| |
| 引用本文： | 王桂珍,李瑞斌,白小燕,杨善潮,郭晓强,李斌,郑国鑫.CMOS存储器瞬时辐照效应规律实验研究[J].微电子学,2009,39(2). |
| |
| 作者姓名： | 王桂珍 李瑞斌 白小燕 杨善潮 郭晓强 李斌 郑国鑫 |
| |
| 作者单位： | 西北核技术研究所,西安,710024 |
| |
| 摘 要： | 对超深亚微米存储器(32 k SRAM)激光辐照下的剂量率效应进行了初步研究,实验测量了SRAM激光辐照下的效应规律,比较了零时SRAM的状态(读状态和片选无效状态)对效应规律的影响,得到了一些初步的效应规律.
|
| 关 键 词： | 存储器 瞬时辐照效应 激光辐照 翻转 闩锁 |
Investigation into Transient Radiation Effects of CMOS SRAMs |
| |
| WANG Guizhen,LI Ruibin,BAI Xiaoyan,YANG Shanchao,GUO Xiaoqiang,LI Bin,ZHENG Guoxin.Investigation into Transient Radiation Effects of CMOS SRAMs[J].Microelectronics,2009,39(2). |
| |
| Authors: | WANG Guizhen LI Ruibin BAI Xiaoyan YANG Shanchao GUO Xiaoqiang LI Bin ZHENG Guoxin |
| |
| Institution: | Northwest Institute of Nuclear Technology;Xi'an 710024;P.R.China |
| |
| Abstract: | Transient radiation effects with pulsed laser on CMOS SRAM was investigated.Numbers of upset and power current versus laser energy were measured.Experimental results indicated that upset with laser energy lower than 0.2 mJ occurred primarily due to local photocurrent,while,with laser energy higher than 0.2 mJ,upset occurred primarily due to rail span collapse. |
| |
| Keywords: | SRAM Transient radiation effect Laser irradiation Upset Latch-up |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
