Determination of refractory elements in U(3)O(8) by carrier distillation emission spectrography

An emission spectrographic method using carrier distillation for the determination of the refractory impurities Ta, Hf, Nb, Th, and W in uranium is described. Different carriers, such as Ga₂O₃, AgCl, AgCl + LiF, and AgCl + NaF in various proportions, were investigated: a 1% NaF + 9% AgCl mixture as carrier at 10% of total charge arced was found to be the most suitable. Spectra were excited in a d.c. arc at 12 A and were photographed with 35-sec exposures. Palladium was used as an internal standard. The lowest limits of determination lie in the range 1–10 ppm for a 100-mg charge. The precision of the method is about 16% or better.