Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature

This paper studies the degradation of device parametersand that of stress induced leakage current (SILC) of thin tunnelgate oxide under channel hot electron (CHE) stress at hightemperature by using n-channel metal oxide semiconductor fieldeffect transistors (NMOSFETs) with 1.4-nm gate oxides. Thedegradation of device parameters under CHE stress exhibitssaturating time dependence at high temperature. The emphasis of thispaper is on SILC of an ultra-thin-gate-oxide under CHE stress at hightemperature. Based on the experimental results, it is found thatthere is a linear correlation between SILC degradation and V_h degradation in NMOSFETs during CHE stress. A model ofthe combined effect of oxide trapped negative charges and interfacetraps is developed to explain the origin of SILC during CHE stress.