| 工艺参量对Ni80Fe20薄膜结构与磁电阻特性的影响 |
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| 引用本文： | 吴平,李希,高艳清,邱宏,王凤平,潘礼庆,田跃. 工艺参量对Ni80Fe20薄膜结构与磁电阻特性的影响[J]. 物理实验, 2006, 26(6): 8-11 |
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| 作者姓名： | 吴平 李希 高艳清 邱宏 王凤平 潘礼庆 田跃 |
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| 作者单位： | 北京科技大学,应用科学学院,物理系,北京,100083 |
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| 基金项目： | 国家工科物理教学基地建设项目;北京科技大学校科研和教改项目 |
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| 摘 要： | NiFe薄膜在室温下具有较高的各向异性磁电阻率,可广泛应用于磁记录和磁传感器.本文研究了工艺条件对电子束蒸发方法制备的Ni80Fe20薄膜磁电阻特性及微结构的影响,获得了制备各向异性磁电阻率达3%~4%的Ni80Fe20薄膜的工艺条件.
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| 关 键 词： | Ni80Fe20薄膜 电子束蒸发 磁电阻 薄膜结构 |
| 文章编号： | 1005-4642（2006）06-0008-04 |
| 收稿时间： | 2005-12-19 |
| 修稿时间： | 2005-12-192006-01-27 |
Effects of processing parameters on the structure and magnetoresistance of Ni80Fe20 films |
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| WU Ping,LI Xi,GAO Yan-qing,QIU Hong,WANG Feng-ping,PAN Li-qing,TIAN Yue. Effects of processing parameters on the structure and magnetoresistance of Ni80Fe20 films[J]. Physics Experimentation, 2006, 26(6): 8-11 |
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| Authors: | WU Ping LI Xi GAO Yan-qing QIU Hong WANG Feng-ping PAN Li-qing TIAN Yue |
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| Affiliation: | Physics Department, Yan-qing, QIU Hong, WANG Feng-ping, PAN Li-qing, TIAN Yue University of Science and Technology Beijing, Beijing 100083, China |
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| Abstract: | NiFe film possesses large anisotropic magnetoresistance ratio at room temperature. It can be widely used in magnetic record and sensors. In this paper, the effects of preparation conditions on the structure and the magnetoresistance characteristics of Ni_ 80 Fe_ 20 films deposited by electron beam evaporation are investigated. The technology for preparing Ni_ 80 Fe_ 20 films with AMR value of 3%~4% has been obtained. |
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| Keywords: | Ni_(80)Fe_(20) film electron beam evaporation magnetoresistance film structure |
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