Transport properties of surface acoustic wave based single electron transport device in the presence of an impurity potential |
| |
Authors: | W Zhang HZ Guo H Yuan CY Zhang C Lu J Gao |
| |
Institution: | aLaboratory of Mesoscopic and Low Dimensional Physics, College of Physical Science and Technology, Sichuan University, Chengdu 610064, PR China;bNational Institute of Measurement and Testing Technology, Chengdu 610021, PR China |
| |
Abstract: | We report the transport properties of a surface acoustic wave based single electron transport device, which contains an unintentional quantum dot induced by background impurity potential fluctuations. It is found that the presence of the impurity potential can cause a deviation of the acoustoelectric current from its quantized value. Through the charging effect of the quantum dot induced by the impurity, we get an approximate relationship between the applied gate voltage and its corresponding electrostatic potential barrier height, together with the Coulomb charging energy needed to add a second electron into the dynamic quantum dot. Moreover, the amplitude of the surface acoustic wave is also estimated within a simple model. |
| |
Keywords: | C Impurities in semiconductors D Electronic transport D Acoustoelectronic effect |
本文献已被 ScienceDirect 等数据库收录! |
|