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Interband Stark effects in InxGa1−xAs/InyAl1−yAs coupled step quantum wells |
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| Authors: | J.H. Kim T.W. Kim K.H. Yoo |
| Affiliation: | aDivision of Electrical and Computer Engineering, Advanced Semiconductor Research Center, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea bDepartment of Physics and Research Institute for Basic Science, Kyung Hee University, Seoul 130-701, South Korea |
| Abstract: | The effects of an electric field on the interband transitions in InxGa1−xAs/InyAl1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A InxGa1−xAs/InyAl1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In0.53Ga0.47As shallow quantum well and a 50 Å In0.65Ga0.35As deep step quantum well bounded by two thick In0.52Al0.48As barriers separated by a 30 Å In0.52Al0.48As embedded potential barrier. The Stark shift of the interband transition energy in the InxGa1−xAs/InyAl1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the InxGa1−xAs/InyAl1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that InxGa1−xAs/InyAl1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers. |
| Keywords: | Nanostructures Optical properties Electronic states |
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