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Pseudo spin-valves with Al or Nb as spacer layer: GMR and search for spin switch behaviour
Authors:F. Russo  G. Carapella  V. Granata  N. Martucciello  G. Costabile
Affiliation:(1) Departement of Physics “E.R. Caianiello”, University of Salerno, via S. Allende, 84081 Baronissi, Italy;(2) CNR-INFM 'SUPERMAT' Research Unit, via S. Allende, 84081 Baronissi, Italy;(3) Departement of Mathematics and Informatics, University of Salerno, via Ponte don Melillo, 84084 Fisciano, Italy
Abstract:The magnetoresistance of several Ferromagnet/Normal metal/Ferromagnet spin-valve type structures has been investigated using Al as normal spacer layer. A magnetoresistance ratio up to 4.1% at room temperature and 5.7% at 0.3 K is found for the sandwich with both Co layers, while slightly lower signals are found for the structures involving CoFe and NiFe layers. The magnetoresistance dependence for Co/Al/Co, Co/Al/CoFe and Co/Al/NiFe on the spacer layer thickness exhibits the familiar non monotonic behaviour with second peak slightly larger than the one reported for Cu based pseudo spin valves. At cryogenic temperatures, preliminary results on the onset of spin switch effects in Co/Al/Co and the full spin switch effect in Co/Nb/Co are also reported here.
Keywords:72.25.-b Spin polarized transport  85.75.-d Magnetoelectronics   spintronics: devices exploiting spin polarized transport or integrated magnetic fields  73.43.Qt Magnetoresistance
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