| 掺杂8-羟基喹啉铝薄膜的电致发光特性研究 |
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| 引用本文： | 郜军 冯秀岚. 掺杂8-羟基喹啉铝薄膜的电致发光特性研究[J]. 发光学报, 1994, 15(2): 136-140 |
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| 作者姓名： | 郜军 冯秀岚 |
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| 作者单位： | 天津理工学院材料物理研究所, 天津 300191 |
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| 摘 要： | 在具有电致发光(EL)的有机整合染料8-羟基喹啉铝(Alq3)中接以染料罗丹明6G(R6G),用真空热蒸发的方法制备器件,获得了峰值波长575nm的黄色直流薄膜电致发光,从而通过掺杂改变了发光颜色.并在Alq3发光层不同区域插入一掺杂薄层(Alq3:R6G),利用其发光波长与未掺杂部分(Alq3)的不同,以此作为“探测层”,通过对器件光谱及电学特性的测量与分析,探讨了有关发光区域,发光机理,界面对发光影响等基本问题.
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| 关 键 词： | 有机薄膜电致发光 掺杂 |
| 收稿时间： | 1993-11-24 |
ELECTROLUMINESCENCE STUDY OFDOPED Alq3 THIN FILMS |
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| Gao Jun,Feng Xiulan,Hua Yulin. ELECTROLUMINESCENCE STUDY OFDOPED Alq3 THIN FILMS[J]. Chinese Journal of Luminescence, 1994, 15(2): 136-140 |
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| Authors: | Gao Jun Feng Xiulan Hua Yulin |
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| Affiliation: | Material Physics Institute, Tianjin Institute of Technology, Tianjin 300191 |
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| Abstract: | The DC drived EL devices have been prepaired by means of conventional vacuum vapour deposition. The emitting material of these devices is Rhodamine (R6G) doped organic chelate dye 8-hydroxyquinoline aluminium (Alq3). The wavelength of devices changed from Alq3''s 523urn to 575urn. Moreover, a doped Alq3 thin film whose emission colour is different from undoped Alq3 emitting layer was used as a "sensing layer".The spectra and I-V character were measured and the emission zone, interface effect, energy transfer mechanism and other fundamental problen of luninescence were discussed. |
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| Keywords: | organic thin film electroluminescence doping |
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