注入Si中的稀土离子Er3+的光学特性

用离子注入方法,将稀土离子Er3+注入到n-Si单晶中,通过对其低温(77K)光致发光光谱的测量,研究其光学特性.结果表明,注入剂量控制在1×1012cm-2～1×1015cm-2范围,退火温度控制在900℃～1100℃时,样品的主要发光峰值位于1.54μm左右.研究了样品的光致发光光谱随注入剂量、退火温度的变化关系,给出峰值在1.54μm附近的未分辨开的谱线的半宽为16.4meV.

OPTICAL PROPERTIES OF ERBIUM-IMPLANTED SILICON

Abstract Erbium impurities in silicon have the important technological property of exhibiting sharp luminescence at 1.54μm which can be excited either optically or electrically.Erbium-doped silicon is very attractive for obtaining light-emitting devices in silica-based optical fibre communication systems.In this paper results of erbium-implanted silicon were presented.Er+ions were implanted into n-type silicon single crystal at room temperature.The range of ion doses investigated in this work varied from 1×1012 to 1×1015cm-2.After ion implantation,all of the samples were thermally annealed for 10min at temperature of 700℃～1100℃ with a dry nitrogen atmosphere.In order to test the optical properties of the erbium-implanted silicon samples,the low-temperature(77K)photoluminescence spectra were measured.The samples were excited by the 632,8nm line of He-Ne laser.The luminescent signal was detected by a liquid-nitrogen-cooled germanium detector through MДP-2 type monochromator.