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Optical anisotropy of GaNAs grown on GaAs(0 0 1) substrate |
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| Authors: | Takahiro Mori Takashi Hanada Toshiharu Morimura Meoung-Whan Cho Takafumi Yao |
| Institution: | a Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;b Center for Interdisciplinary Research (CIR), Tohoku University, Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan |
| Abstract: | In this paper GaNxAs1−x surfaces during growth are observed using reflectance difference or reflectance anisotropy spectroscopy (RDS or RAS). The epi-layer was grown by solid-source molecular beam epitaxy (MBE) system with a RF nitrogen prasma source. RD spectra showed broader structure and reduced amplitude compared to those of GaAs surfaces; GaAs(2 × 4)-like features were still observed with weak and blue-shifted peaks. In the low growth temperature region, an extra structure was also observed around 3.02 eV. We proposed that GaNxAs1−x surface can be classified into three types of the surface. |
| Keywords: | GaNAs Reflectance difference spectroscopy (RDS) Reflectance anisotropy spectroscopy (RAS) Surface Molecular beam epitaxy (MBE) |
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