Electron States of Few—Electron Quantum dots |
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作者姓名: | 戴振宏 孙金祚 等 |
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作者单位: | [1]InstituteofSolidStatePhysics,ChineseAcademyofSciences,P.O.Box1129,Hefei230031 [2]CCAST(WorldLaboratory),P.O.Box8730,Beijing100080 |
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摘 要: | We study few-electron semiconductor quantum dots using the unrestricted Hartree-Fock-Roothaan method hased on the Gaussian basis.Our emphasis is on the energy level calculation for quantum dots.The confinement potential in a quantum dot is assumed to be in a form of three-dimensional spherical finite potential well.Some valuable results,such as the rearrangement of the energy level,have been obtained.
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关 键 词: | 半导体 毫微技术 电子量子斑点 电子态 |
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